화학공학소재연구정보센터
Applied Chemistry for Engineering, Vol.32, No.6, 659-663, December, 2021
반도체 제조공정 미세먼지-질소산화물 동시 저감을 위한 오존 고속산화공정 최적화 연구
Optimization of an Ozone-based Advanced Oxidation Process for the Simultaneous Removal of Particulate Matters and Nitrogen Oxides in a Semiconductor Fabrication Process
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초록
반도체 제조공정에서 발생하는 미세먼지와 질소산화물 동시처리를 위하여 오존산화, 습식중화 및 습식전기집진 기술들을 직접화한 10 CMM급 복합오염물질 제거시스템을 개발하였으며, NOx 제거효율 증대를 위한 공정변수 제어 및 최적화를 진행하였다. 특히, 전원공급장치를 포함한 습식전기집진장치 핵심부품 안정성 평가를 위해 30일 동안의 장기운전도 병행하였다. 오존산화 기반 DeNOx 공정에서 가장 중요한 운전변수인 O3/NO 비율은 1.5 부근에서 최적화하였으며, 습식중화 공정의 운전변수를 최적화하여 중화반응에 의한 제거효율 기여도를 확인하였다.
10 m3/min (CMM) multi-pollutants abatement system was successfully developed by effectively integrating ozone oxidation, wet scrubbing, and wet electrostatic precipitation for the simultaneous removal of particulate matters (PMs) and NOx in a semiconductor fabrication process. The sophisticated control and optimization of operating parameters were conducted to maximize the destruction and removal efficiency of NOx. In particular, the stability test of a wet electrostatic precipitator was carried out in parallel for 30 days to validate the reliability of core parts including a power supply. An O3/NO ratio, which is the most important operating parameter, was optimized to be about 1.5 and the optimization of wet scrubbing with a reducing agent made it possible to analyze the contribution of neutralization reaction.
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