Journal of Vacuum Science & Technology A, Vol.17, No.3, 891-894, 1999
Real-time monitoring of structure and stress evolution of boron films grown on Si(100) by ultrahigh vacuum chemical vapor deposition
The morphology and biaxial stress of amorphous boron films grown on silicon at 630 degrees C have been determined in situ and in real time using energy dispersive x-ray reflectivity and multiple-beam optical stress sensor techniques. The capability to determine the morphology and stress of light-element thin films in situ and in real time provides a unique opportunity to optimize the parameters of thin film deposition under chemical vapor deposition conditions.