화학공학소재연구정보센터
홈 로그인 로그아웃 연락처 사이트맵
Korean Journal of Materials Research, Vol.31, No.10, 569-575, October, 2021
DOI10.3740/MRSK.2021.31.10.569  Export Citation
유기 킬레이터들을 이용한 구리 식각에 대한 반응성 평가
Reactivity Evaluation on Copper Etching Using Organic Chelators
김철희, 임은택1, 박찬호, 박성용1, 이지수1, 정지원1, †, 김동욱†
  • 인하대학교 화학과
  • 1인하대학교 화학공학과
Chul Hee Kim, Eun Taek Lim1, Chan Ho Park, Sung Yong Park1, Ji Soo Lee1, Chee Won Chung1, †, and Dong Wook Kim†
  • Department of Chemistry, Inha University, 100, Inharo, Michuhol-gu, Incheon 22212, Republic of Korea
  • 1Department of Chemical Engineering, Inha University, 100, Inharo, Michuhol-gu, Incheon 22212, Republic of Korea
E-mail:,
The reactivity evaluation of copper is performed using ethylenediamine, aminoethanol, and piperidine to apply organic chelators to copper etching. It is revealed that piperidine, which is a ring-type chelator, has the lowest reactivity on copper and copper oxide and ethylenediamine, which is a chain-type chelator, has the highest reactivity via inductively coupled plasma-mass spectroscopy (ICP-MS). Furthermore, it is confirmed that the stable complex of copper-ethylenediamine can be formed during the reaction between copper and ethylenediamine using nuclear magnetic resonance (NMR) and radio-thin layer chromatography. As a final evaluation, the copper reactivity is evaluated by wet etching using each solution. Scanning electron micrographs reveal that the degree of copper reaction in ethylenediamine is stronger than that in any other chelator. This result is in good agreement with the evaluation results obtained by ICP-MS and NMR. It is concluded that ethylenediamine is a prospective etch gas for the dry etching of the copper.
Keywords:copper;chelator;ethylenediamine;piperidine;aminoethanol
  1. Jain A, Kodas TT, Hampdensmith MJ, Thin Solid Films, 269(1-2), 51 (1995)
  2. Bohr MT, Solid State Technol., 39, 105 (1996)
  3. Lee S, Kuo Y, Thin Solid Films, 457(2), 326 (2004)
  4. Choi TS, Levitin G, Hess DW, ECS J. Solid State Sci. Technol., 2, 506 (2013)
  5. Lee S, Kuo Y, J. Electrochem. Soc., 148(9), G524 (2001)
  6. Tamirisa PA, Levitin G, Kulkarni NS, Hess DW, Microelectron. Eng., 84, 105 (2007)
  7. Wu F, Levitin G, Hess DW, ACS Appl. Mater. Interfaces, 2, 2175 (2010)
  8. Rossnagel SM, Kuan TS, J. Vac. Sci. Technol. B, 22(1), 240 (2004)
  9. Zhang W, Brongersma SH, Heylen N, Beyer G, Vandervorst W, Maex K, J. Electrochem. Soc., 152(12), C832 (2005)
  10. Wu F, Levitin G, Hess DW, J. Vac. Sci. Technol. B, 29, 011013 (2011)
  11. Howard BJ, Steinbruchel C, Appl. Phys. Lett., 59, 914 (1991)
  12. Ohno K, Sato M, Arita Y, J. Electrochem. Soc., 143(12), 4089 (1996)
  13. Lee JW, Park YD, Childress JR, Pearton SJ, Sharifi F, Ren F, J. Electrochem. Soc., 145(7), 2585 (1998)
  14. Kwon MS, Lee JY, J. Electrochem. Soc., 146(8), 3119 (1999)
  15. Kang SW, Kim HU, Rhee SW, J. Vac. Sci. Technol. B, 17(1), 154 (1999)
  16. Wu F, Levitin G, Hess DW, J. Electrochem. Soc., 159, H121 (2011)
  17. Lim ET, Ryu JS, Chung CW, Thin Solid Films, 665, 51 (2018)
  18. Lim ET, Ryu JS, Choi JS, Chung CW, Vacuum, 167, 145 (2019)
  19. Ryu JS, Lim ET, Choi JS, Chung CW, Thin Solid Films, 672, 55 (2019)