A twin-source plasma chemical vapor deposition (p-CVD) method has been designed and tested for high rate deposition of SiO2 films. In the p-CVD system, two kinds of source gases are decomposed in the plasma generators independently, and then introduced onto the substrate. The gas in front of the substrate is excited successively by a third plasma generated by coupling of rf power into the electrode just below the substrate. The films were formed at room temperature. The setup increased the collision probability of reactive O* and SiHx*, and a high deposition rate of 1.9 mu m/min was achieved by the high density of the precursors.