Journal of Vacuum Science & Technology A, Vol.16, No.1, 278-289, 1998
Surface reaction probabilities and kinetics of H, SiH3, Si2H5, CH3, and C2H5 during deposition of a-Si : H and a-C : H from H-2, SiH4, and CH2 discharges
The relations between the surface reaction probability beta of an atom or a radical in a reactive gas discharge, its diffusive flux to the wall, spatial density profile and temporal density decay during the postdischarge, are examined. Then, the values of beta for H, SiH3, and Si2H5 on a growing a-Si:H film, and CH3 and C2H5 On an a-C:H film are derived from the temporal decay of radical densities during the discharge afterglow by using time-resolved threshold ionization mass spectrometry. For SiH3 on a-Si:H, beta=0.28+/-0.03 in excellent agreement with previous determinations using other experimental approaches, and for Si2H5, 0.1
Keywords:HYDROGENATED AMORPHOUS-SILICON;CHEMICAL-VAPOR-DEPOSITION;MASS-SPECTROMETRY DETECTION;MONTE-CARLO SIMULATIONS;GLOW-DISCHARGE;ATOMIC-HYDROGEN;RF DISCHARGES;FILM GROWTH;PLASMA;RADICALS