We investigated the nanostructure of Ge deposited on Si(001) at T=560 degrees C with x-ray photoelectron spectroscopy using peak shape analysis and with atomic force microscopy. Analyzing the Ge 2p as well as the Si KLL spectra, we find strong island growth. The Ge deposited is equal to a 14-monolayer-thick film. In agreement with the x-ray photoelectron spectroscopy results, the atomic force microscope pictures show strong island formation. About 50% of the Si surface is covered by Ge islands. The islands are distributed regularly and have an average height of 50 Angstrom. We find some variation in height ranging from similar or equal to 20 to similar or equal to 80 Angstrom.