Very thin, smooth, and uniform carbon films have been produced by ablating a pyrolytic graphite target using an ultraviolet pulsed excimer laser at fixed energy in an ultrahigh vacuum system. The films were deposited on a Si (111) surface at room temperature. The deposition process is investigated in situ by analyzing the time evolution of spectra obtained by Auger electron, x-ray photoelectron, and electron energy loss spectroscopies at different stages of the film growth. A relationship of the atomic concentration of Si and C with the number of laser pulses and film thickness is obtained from the spectra. A SIG : interface with a thickness between one and two monolayers is observed to be formed during the very first deposition pulses. The study of this SC buffer layer is particularly relevant when a carbon film is used as a hard coating, where strong adhesion of the film to the substrate is required.