We have successfully used quadrupole-based secondary ion mass spectrometry (SIMS) to address numerous problems in flat panel display materials. This technique is well suited to address certain problems with these materials because of its combination of sensitivity, spatial resolution, and especially the ability to depth profile dielectric layers and structures on glass substrates. Measuring Na or other alkali element diffusion into layers deposited on glass substrates is difficult by SIMS because small amounts of charge buildup on the sample surface can cause rapid migration of the alkalis within the layers. We have developed an analysis protocol that minimizes migration of Na within SiO2 layers and will show some results of utilizing this technique for examining alkali element distributions in SiO2 and In-Sn oxide layers deposited on glass. We have also used O bombardment to measure Tb doping in electroluminescent ZnS display material. Using Cs bombardment we can analyze H, C, O, and N impurities in amorphous and crystalline silicon thin film transistor structures on glass substrates. The combination of low energy Cs bombardment at high incidence angles and an ultrahigh vacuum chamber yield low detection limits for these elements with excellent depth resolution. We have also used Cs bombardment to measure ion-implanted O and F distributions in electroluminescent ZnS. These elements have been investigated as charge compensators for Mn and Tb doping. SIMS offers a means to precisely calibrate the amounts of dopants within the electroluminescent layer.