Journal of Vacuum Science & Technology A, Vol.15, No.3, 1351-1357, 1997
Atomic and Mesoscopic Scale Characterization of Semiconductor Interfaces by Ballistic-Electron-Emission Microscopy
Ballistic electron emission microscopy (BEEM) is a powerful new low energy electron microscopy in materials physics for nondestructive local electronic characterization of semiconductor heterostructures. In this article, low energy electron imaging of buried semiconductor heterostructures will be explored, with particular emphasis on BEEM imaging of buried objects in metal-GaAs based heterostructures.
Keywords:SCHOTTKY-BARRIER HEIGHT;DISLOCATION-STRUCTURE;TRANSPORT;SPECTROSCOPY;GAAS;RECOMBINATION;SCATTERING;FIELD