In this article we describe the pulsed laser deposition of smooth, particulate-free, and high conductivity SrRuO3, which are well suited for use as bottom electrodes in high capacity integrated thin-film capacitors. The films were heteroepitaxially grown on (100) LaAlO3 substrates at temperatures above 650 degrees C. Scanning tunneling microscopy measurements revealed that higher deposition temperatures produced larger grain sizes, and it was found from x-ray diffraction and four-probe tests that higher temperatures also led to improved film crystallinity and conductivity, respectively. At a deposition temperature of 775 degrees C, the room-temperature resistivity of SrRuO3 films was 280 mu Omega cm, and the residual resistivity ratio was 8.4, making these materials excellent candidates for use as thin-film electrodes.