Multicomponent Ga2O3-In2O3 films have been prepared by dc magnetron sputtering using targets with a Ga content [Ga/(ln+Ga) atomic ratio] of 0-60 at. %. Transparent conducting thin films prepared with Ga contents up to about 40 at. % were identified as Ga-doped ln(2)O(3) (In2O3:Ga). A minimum resistivity of 5.8 x 10(-4) Omega cm and a maximum carrier concentration of 5 x 10(20) cm(-3) were obtained in an In2O3:Ga film prepared at a substrate temperature of room temperature with a Ga content of 30 at. %. Transparent conducting thin films prepared with a Ga content of 45-50 at. % were identified as a ternary compound : gallium indium oxide, (Ga,In)(2)O-3. The electrical properties exhibited by the (Ga,In)(2)O-3 films were relatively independent of the substrate temperature from room temperature to 350 degrees C. A sheet resistance of 1-2 k Omega and an average transmittance above 95% were obtained in (Ga,In)(2)O-3 films with a thickness of about 20 nm and prepared with a Ga content of 50 at. %.