A scanning tunneling microscope that performs scanning tunneling microscopy, scanning tunneling spectroscopy, and ballistic electron emission microscopy measurements on 2-in. wafers has been designed and constructed. The instrument is incorporated into the Si preparation chamber of a cryo-pumped Fisons V90H Si/III-V molecular beam epitaxy machine. Its design uses two commercial Burleigh inchworms : one for performing scanning tunneling microscopy measurements and a second for making a front contact which is necessary for the ballistic electron emission microscopy measurements. The substrate holder for the V90H system is designed to handle wafers up to 6 in. in diameter. Therefore, a custom 6-in.-diam. holder has been constructed which supports two 2-in. holders : one for performing reflection high energy electron diffraction measurements and a second which allows transfer of the wafer to the scanning tunneling microscope and also incorporates a removable shadow mask for growing metal/semiconductor Schottky diodes. Although the chamber vibrations generated by the cryopump and its compressor are quite severe, atomic-resolution images have been obtained with all of the system’s pumps in operation. The enhanced stability of our design is attributed to our unique support system of the inchworm and wafer which are both manufactured from machinable ceramic, the use of Be-Cu springs with an extension length of 16 in. for vibration isolation, and the use of silicone O-rings for vibration damping.