Arc-like Ti vapor plasma is formed on the electron beam evaporation source by applying low de voltage to the anode near the source in high vacuum. This plasma spectrum consists of Ti I (neutral) and Ti II (Ti+) Lines. However no emission lines of nitrogen are observed with nitrogen gas inflow up to 1.3x10(-1) Pa. This suggests that the dominant ion species is Ti+ Ti and TiN films are deposited on the water-cooled and non-cooled substrates at anode current 60 A. When negative substrate voltage (V-s) increases from 0 to 1000 V, substrate current density at 0.34 m from the source increases from 60 to 90 A/m(2). Ion-to-Ti impinging flux ratio is estimated to be similar to 1.35 at V-s=0 V. Deposition rates of 4 nm/s (Ti film) and 3 nm/s (TiN film) at V-s=0 V decrease largely in the former case and slightly in the latter case with increasing V-s. That is, self-sputter yield of the former is larger than that of the latter. The former varies with, and the latter is independent of substrate temperature. N/Ti ratio in TiN film is close to unity for the noncooled substrate. On the other hand, N/Ti ratio decreases from 0.9 to 0.7 with delta TiN single phase for the water-cooled substrate with increasing V-s. These results are different from the reported results from low energy-ion assisted deposition and reactive bias sputtering. This is attributed to the fact that self-ion bombardment differs from N-2(+) and/or Ar+ bombardment.