Multicomponent transparent conducting oxide films with electrical, optical, and chemical properties that varied with the composition were prepared by rf magnetron sputtering. A resistivity as low as 2.8x10(-3) Ohm cm was obtained for InGaO3 films prepared at substrate temperatures of room temperature and 350 degrees C. In deposited In2O3-InGaO3-Ga2O3 films, the refractive index gradually decreased and the etching rate in HCl solutions increased as the Ga/(Ga+In) atomic ratio was increased. A resistivity of 7.8x10(-4) Ohm cm was obtained for a MgIn2O4 film. The etching rate of MgIn2O4 films in HCl solutions increased as the In/(In+Mg) atomic ratio was decreased. In MgIn2O4-Zn2In2O5 films, the etching rate in a 0.2 M KCI solution gradually increased, the refractive index increased, and the band gap decreased as the Zn/(Zn+Mg) atomic ratio was increased. In addition, the transmittance of an InGaO3/Zn2In2O5 multilayer film was slightly improved in comparison with that of only a single layer Zn2In2O5 film.