Selective functionalization of dielectric surfaces is required for area-selective atomic layer deposition and etching. We have identified precursors for the selective gas-phase functionalization of plasma-deposited SiO2 and SiNx surfaces with hydrocarbons. The corresponding reaction mechanism of the precursor molecules with the two surfaces was studied using in situ surface infrared spectroscopy. We show that at a substrate temperature of 70 degrees C, cyclic azasilanes preferentially react with an -OH-terminated SiO2 surface over a -NHx-terminated SiNx surface with an attachment selectivity of similar to 5.4, which is limited by the partial oxidation of the SiNx surface. The cyclic azasilane undergoes a ring-opening reaction where the Si-N bond cleaves upon the reaction with surface -OH groups forming a Si-O-Si linkage. After ring opening, the backbone of the grafted hydrocarbon is terminated with a secondary amine, -NHCH3, which can react with water to form an -OH-terminated surface and release CH3NH2 as the product. The surface coverage of the grafted cyclic azasilane is calculated as similar to 3.3 x 10(14) cm(-2), assuming that each reacted -OH group contributes to one hydrocarbon linkage. For selective attachment to SiNx over SiO2 surfaces, we determined the reaction selectivity of aldehydes. We demonstrate that aldehydes selectively attach to SiNx over SiO2 surfaces, and for the specific branched aliphatic aldehyde used in this work, almost no reaction was detected with the SiO2 surface. A fraction of the aldehyde molecules reacts with surface -NH2 groups to form an imine (Si-N-C) surface linker with H2O released as the byproduct. The other fraction of the aldehydes also reacts with surface -NH2 groups but do not undergo the water-elimination step and remains attached to the surface as an aminoalcohol (Si-NH-COH-). The surface coverage of the grafted aldehyde is calculated as similar to 9.8 x 10(14) cm(-2) using a known infrared absorbance cross-section for the -C(CH3)(3) groups.