Pulsed laser ablation deposition was used to synthesize polycrystalline SrBi2Ta2O9 layered ferroelectric thin films on the platinized silicon substrate. The surface roughness of the deposited film was an average of 4 nm. The titanium element was diffused to the SrBi2Ta2O9 layer through the platinum layer. P-E hysteresis loop for the Pt/SrBi2Ta2O9/Pt/Ti capacitor was well saturated and symmetric (P-r = 3 mu C/cm(2), E(c) = 25 kV/cm).