We fabricated light-influenced resistive random access memory (RRAM) based on Si nanocrystals (NCs) with a configuration of Au/Si NC@SiO2/Si device by ion implantation. The Si NCs were self-assembled synthesized through the Si ion implantation into the SiO2/Si substrates followed by thermal annealing process. The resistance states of the Au/Si NC@SiO2/n-Si devices can be regulated by electric field and light irradiation, which can be distinguished and evaluated by the photoluminescence spectra. It was speculated that a series of SiOx(x <= 2) nanoinclusions were bridged by more conductive oxygen vacancies, incorporating with Si NCs to form the continuous conductive pathway. Besides, the forming Si NCs and electrons from the substrates play key roles in the formation of the conductive filaments. The light-influenced resistive switching memory based on the implanted Si NCs provides the possibility to integrate the light and electric fields into integrated circuits in the future.