Crystal facet engineering, a trending technique to acquire superior exciton pair anti-recombination and interfacial charge pair separation via an inherent functional exposed facet isotype junction, is the current research hotspot. Selectively controlling facet exposure factor with Schottky energy barrier architecture across discerned exposed functional facet attested to facilitate electron injection-separation via a shorter barrier height and closer surface distance. In this context, a {040/110}-BiVO4@Ag@CoAl-LDH Z-scheme isotype heterostructure with elevated {040} facet exposure factor tailored a {040/110} crystal facet isotype junction, and {040}-BiVO4 functional facet/metallic Ag-0 nano-island semiconductor-metal selective Schottky contact was fabricated meticulously via a three-step reflux, photoreduction, followed by an in situ co-precipitation method. Inherent attribution of crystal facet isotype junction and minor semiconductor-metal Schottky barrier toward the nature of exciton pair separation and elevated photoredox activity was neatly demonstrated and well inferred, which is the novelty of the present research. The ternary isotype heterostructure corroborates impressive gemifloxacin detoxification (89.72%, 90 min) and O-2 generation (768 mu mol, 120 min), which are multiple folds that of respective pure and binary isotype heterostructures. The bottom-up photoredox activity was well ascribed to shorter Schottky barrier hot electron channelization provoked superior exciton pair separation and well attested via linear sweep voltammetry (315 mu A), photoluminescence, electrochemical impedance spectroscopy, Bode, carrier density, and transient photocurrent analysis. The research illustrates a novel insight and scientific basis for the rational design of crystal facet isotype junction and selective Schottky contact vectorial electron shuttling promoted Z-scheme charge transfer dynamics isotype heterostructure systems toward photocatalytic energy-environmental remediation.