This work is a study of the effect of low-energy e-beam radiation on subsequent wet chemical etching of silicon dioxide (SiO2). The silicon dioxide etch selectivity is examined considering the parameters of electron beam patterning and etching techniques. Electron beam energy optimization considerations for dose minimization were considered following the e-beam exposure and etching of 100 and 50 nm SiO2 films of dry, steam, low-pressure chemical vapor deposition and remote plasma-enhanced chemical vapor deposition samples. The selectivity and etching characteristics of the respective oxides and thicknesses are presented and discussed.