It is well known that liquid Al wetting on a SiC substrate is an important process, especially when manufacturing Al/SiC composite materials. Many researchers have attempted to investigate Al/SiC wetting kinetics; however, it is difficult since Al/SiC wetting occurs at high temperatures. It was found that the measured results showed diverse Al/SiC contact angles. Under such circumstances, molecular dynamic (MD) simulations were performed for spreading of Al/SiC and Al-12 at.%Si/SiC, each process merged with heating at 973-1533 K, by which qualitative analysis of temperature effects on atomic distribution, dissolution, and composition were made, those results demonstrated that the temperature change dominated the kinetics of Al/SiC wetting. In accordance with reactive wetting mechanisms, thermal energy successively activated liquid/solid dissolution and interactions in Al/SiC. Increased temperature was attributed to the enhancement of Al/SiC wettability through the increased Al diffusion coefficient.