We have looked at beta-SiC with soft x-ray emission and photoemission spectroscopy. From the Si L23 and C K emissions, the Si s + d-like and C p partial density of states in the bulk valence band are identified and compared with valence band photoemission. In addition to bulk electronic structural features, photoemission from a (3 X 2) Si-rich surface shows two surface-derived valence features at approximately - 2.6 and approximately - 1.6 eV relative to the Fermi level. The intensities of these valence features vary as those of surface Si 2p core level components shifted by - 0.5 and - 1.4 eV from the bulklike SiC Si 2p core level. We have also used the Si L23 absorption edge as a probe of the unfilled states near the conduction band minimum.