This paper reports some new characterization results of white defects in a frame-transfer change-coupled device. These results are obtained with reference to normal pixels under different temperature and integration time. A bulk generation model is used to calculate the trap capture cross section and activation energy level. It is found that weak white defects can be explained by bulk traps due to metal contamination but the gross white defects with very high generation rate and lower temperature dependence can only be attributed to external carrier injection.