We activated boron-doped polycrystalline Si at 1100 degrees C, and studied the time dependence of the gate resistance with respect to subsequent processing steps at lower temperatures. The resistance does not change over time for a dose of 9 X 10(14) cm(-2). However, for a higher dose of 9 X 10(15) cm(-2), it increases with time and finally saturates. For any temperature above 800 degrees C, the onset time for the resistance increase is about 30 s, while for lower temperatures, the time becomes significantly longer. In other words, the sheet resistance obtained at higher temperatures is degraded if the subsequent annealing time is longer than this onset time.