Journal of the Electrochemical Society, Vol.146, No.2, 741-743, 1999
On the origins of oxidation-induced stacking faults in silicon
A qualitative explanation for the origins of oxidation-induced stacking faults, QSFs, is presented. This explanation is based on vacancy annihilation by dislocations during crystal growth, which influences the distribution and size of vacancy clusters within the finished boule. A mechanism for nucleation of OSFs at small clusters of vacancies is described.