In order to overcome the efficiency limitation factors of SnS based thin film solar cells, this manuscript is aimed to improve the optoelectronic properties of SnS through the substitutional doping of Cu, In and Ag into SnS lattice sites. Cu, In and Ag doped SnS nanorods are prepared through CTAB-assisted solvothermal method with a reaction temperature of 150 degrees C and reaction time of 90 min. XPS analysis reveals the presence of Cu2+, In3+ and Ag2+ as the dopant cation in the prepared Cu, In and Ag doped SnS samples respectively. The variations in the crystal structural and morphological properties with respect to doping can be very well correlated with the low ionic radii of dopant cation as compared to the host cation (Sn2+). The structural and optoelectronic studies demonstrate the successful doping in SnS which is optimized as Cu 4%, In 4% and Ag 6%. Among all dopants, the band gap energy, carrier concentration and electrical resistivity are optimized as 1.34 eV, 10(14) cm(-3) and 0.3 x 10(5) Omega cm respectively for Cu 4% doped SnS.