Journal of the Electrochemical Society, Vol.145, No.6, 2113-2120, 1998
Chemically deposited Sb2S3 and Sb2S3-CuS thin films
Thin films of antimony sulfide have been deposited from chemical baths containing antimony trichloride and sodium thiosulfate maintained at 10 degrees C. Upon annealing in nitrogen at 300 degrees C for 1 h, the films become photosensitive with photo-to dark-current ratio of two to three orders of magnitude at 2 kW m(-2) tungsten halogen radiation. The annealed films are crystalline with an X-ray diffraction pattern matching that of stibnite, Sb2S3, (JCPDS 6-0474) and show an optical bandgap of 1.78 eV. Deposition of a thin film of CuS on the antimony sulfide thin film and subsequent annealing in nitrogen at 250 degrees C for 1 h produces films with acceptable salar control characteristics : integrated visible transmittance, T-vis 15%; integrated visible reflectance, R-vis 12%; integrated infrared transmittance, T-ir, 14%; integrated infrared reflectance, R-ir 36%; and a shading coefficient of about 0.35. The X-ray diffraction patterns of the annealed Sb2S3-CuS thin films indicate the formation of a ternary compound with the structure of famatinite, Cu3SbS4.