Plasma Chemistry and Plasma Processing, Vol.40, No.5, 1351-1363, 2020
High H-atom Density in R(He,Ar)/x%(N-2-5%H-2) Early Afterglows
Absolute densities of N atoms and N-2(A) molecules and estimated densities of H atoms and N-2(X,v > 13) and NH molecules are determined in R(He,Ar)/x%(N-2-5%H-2) flowing microwave discharges by a band intensity ratio method after calibration of the N atom density by NO titration. By varying the plasma parameters: pressure of 8 and 4 Torr, flow rates of 0.5, 1.0 and 2.0 slpm, HF power up to 150 W, a high N + N recombination fraction (> 80%) has been observed with He dilution in the early afterglow (t = 5 x 10(-3) s). A maximum value of the H-atom density has been found in the He/2%(N-2-5%H-2) gas mixture at 8 Torr, 0.5 slpm and 150 W, with a [H]/[N] ratio of 0.3. With Ar dilution, it is found that the Ar/5%(N-2-5%H-2) gas mixture at 4 Torr, 0.5 slpm, 100 W brought a high H-2 dissociation (80%), with a [H]/[N] ratio of about 0.6. From the variation of the H-atom density along the quartz tube, the wall destruction probability of the H-atoms was calculated to be gamma(He)(H) = gamma(Ar)(H) = (1-4) x 10(-3) in helium and argon mixtures. Such results are of interest for the enhancement of surface nitriding by the combined effects of N and H atoms inclusion inside a TiO2 surface.
Keywords:R(He,Ar)/N-2/H-2 afterglows;Band intensity ratio method;N and H atoms densities;gamma Wall destruction probability of H-atoms on quartz walls