In this paper we investigate the possibility of using the surface photovoltage technique (SPV) for fast-feedback metal contamination monitoring. Boron-doped, 8 in. wafers were "contaminated" during wet, dry, and ion implantation processing. Processed wafers were then annealed using rapid thermal processing (RTP) to drive in metals from the surface into the bulk. Following RTP, SPV measurements were carried out to measure carrier diffusion length and Fe concentration. It is found that both quantities are underestimated if measured immediately after RTP. The error increases with the wafer resistivity and it is due to incomplete Fe-B pairing during cooling down from the high-temperature RTP anneal. To reach equilibrium, a relaxation time of a few hours to days is necessary, depending on the wafer resistivity. However, we show that Fe-B pairing can be accelerated by performing a post-RTP anneal at 80 degrees C. Using this procedure the contamination introduced during standard very large scale integrated processes could be measured within 30 min from wafer processing.