In2O3 films grown by atomic layer epitaxy were implanted by fluorine ions with doses ranging from 5 x 10(14) to 1.4 x 10(17) ions cm(-2). Annealing at 500 degrees C decreased the fluorine contents by similar to 40%, as analyzed by the nuclear resonance broadening method. The lowest resistivitity, 2.7 x 10(-4) Omega cm, was measured from film having an average fluorine content of 2.3 atom percent. Hall mobilities of the In2O3:F films were in the same range as those of the undoped In2O3, i.e., 60 to 80 cm(2)/Vs.