A new simple, and computationally efficient model based on the arrival angle model with re-emission was developed to simulate the step coverage for low pressure chemical vapor deposition process. Instead of the Monte Carlo simulation, an analytical function for the deposition rate based on a hemispherical vapor source model was used. Thin film deposition profiles were obtained with an execution time much shorter than the Monte Carlo method, irrespective of the trench geometry and sticking coefficient. Simulation results were compared with the deposition of tungsten, high temperature oxide, and tantalum oxide to show the validity of this model, which was confirmed.