A novel method of galvanic deposition of copper is described. The solution is composed of cupric sulfate and hydrofluoric acid. The main principle of deposition is the reduction copper ion by electrons released from silicon. This electrochemical reaction includes the silicon dissolution and copper deposition simultaneously. The copper film thickness increases with the hydrofluoric acid concentration and the deposition time. The growth properties are investigated, and the possibility of using such a technology for copper deposition on silicon is demonstrated. The resistivity of deposited Cu on silicon is 2.16 mu Omega cm.