A mathematical model has been developed to investigate the metallorganic chemical vapor depositon of copper films using copper hexafluoroacetylacetonate vinyltrimethylsilane (Cu(hfac)VTMS) and argon in a cold-wall vertical single-wafer reactor. This model includes mixed convection, heat transfer by solid-phase conduction and gas-phase convection, and simplified surface reaction kinetics. The model is unique in that the heat conduction in the solid phase is combined with the gas phase. The resistance-heated wafer holder is modeled, for which the heat conduction through the holder is taken into consideration for prediction of its surface temperature distribution. The results show that a dimensionless quantity Biot number for heat, Bi-h, is an important factor in determining the pattern of the temperature profile across the wafer and that the temperature profile is significantly affected by flow rate. It is confirmed that a showerhead at the inlet increases the growth rate dramatically and leads to a film of more uniform thickness.