Copper-indium-gallium-selenium (Cu-In-Ga-Se) precursor thin films have been prepared by electrodeposition techniques on molybdenum substrates. The films have been characterized by inductively coupled plasma spectrometry, Auger electron spectroscopy, x-ray diffraction, electron probe microanalysis, current-voltage characteristics, spectral response, and electron-beam-induced current. Additional In or Cu, Ga, and Se have been added to the Electrodeposited precursor dim by physical evaporation to adjust the final composition to CuIn1-xGaxSe2, and allowed to crystallize at 550 degrees C. A ZnO/CdS/CuIn1-xGaxSe2 device fabricated using electrodeposited Cu-In-Ga-Se precursor layers resulted in an efficiency of 12.3%.