The kinetics of a thermal oxidation scheme with enhanced growth rate for 6H-SiG is reported in this paper. This scheme is based upon the formation of a thick amorphous layer created using high-dose ion implantation followed by thermal oxidation. The oxide thickness has been demonstrated to be larger in the amorphized region, when compared to the unimplanted (monocrystalline SiC) region, after dry oxidation. The oxide growth rate was parabolic in nature in the amorphized region, in contrast to a mixed linear-parabolic growth rate observed for the monocrystalline region.