In this paper, we reported a facile and cost effective way to deposit Cu2ZnSnS4 (CZTS) films using a non-toxic precursor ink and photovoltaic performance of single junction CZTS solar cell by implementing experimentally obtained optical and electrical parameters of our CZTS film in a simulation program known as SCAPS-1D (solar cell capacitance simulator in one dimension). The ink was deposited over glass substrates by drop casting method and the as-deposited films were subjected to thermal annealing at 450 and 500 degrees C in N-2 atmosphere. X-ray diffraction and Raman scattering analysis revealed the polycrystalline nature of CZTS films with tetragonal kesterite phase. The values of optical band gap (E-g) were found to vary in between 1.26 and 1.41 eV depending on the annealing condition. Hall measurement showed p-type electrical conductivity with good electrical properties, yielding resistivity (rho) in the range of 18.6-1.9 x 10(2) Omega-cm, carrier concentration (n) = 6.65 x 10(16) -8.72 x 10(17) cm(-3) and mobility (mu) = 10.6-19.4 cm(2)/Vs. Numerical simulation of CZTS thin film solar cells with CdS buffer layer was modeled through SCAPS-1D using the experimental data of CZTS films obtained in this work. A maximum efficiency of 14.12% was obtained considering all possible defects and radiative recombination which can be occurred under realistic situation.