화학공학소재연구정보센터
Journal of the Electrochemical Society, Vol.143, No.4, 1375-1383, 1996
Simulations of a Feedback-Control Scheme for an Inductively-Coupled Plasma Source for Etching Applications
Processing large area wafers with inductively coupled plasma sources will require some form of real-time control. The design of such a control system requires a detailed knowledge of the process transfer function, i.e., process gains and the response time of the process to controllers and disturbances. In this paper, a feedback control system is proposed and investigated in which two or more independently powered and controlled coils are used to control a density measurement-based uniformity and the density of a species in an inductively coupled plasma reactor which is operating in a reactant-limited regime. Stability limits and the utility of this control scheme are investigated using zero and two-dimensional models.