In this study, we describe a method to fabricate a memory device using a ferroelectric-graphene hybrid film. When two ferroelectric-graphene hybrid films are stacked continuously, a ferroelectric 1 (F-1) - graphene 1 (G(1)) -ferroelectric 2 (F-2) - graphene 2 (G(2)) structure can be formed. Here, G(1), F-1, and G(2) can be assigned as a gate electrode, a gate electrode, and a channel region, respectively. Therefore, when a ferroelectric-graphene hybrid film is stacked in a desired place on a substrate and used as electrode and gate insulators, a memory device can be fabricated easily. However, the physical connection between stacked graphene sheets might lead to the electrical path for leakage current. Therefore, a sidewall passivation process has been introduced to improve reliability issue that may occur during stacking. Through this, the leakage current path was blocked and the memory characteristics were observed repetitively. This demonstration is expected to be very economical because the device can be manufactured with only a small amount of graphene on a large area.