The dry etching of cobalt silicide has been investigated to evaluate the most important process variables. It has been demonstrated that among the commonly used etchants, only chlorine atoms are suitable to react appreciably with CoSi2. Strong ion bombardments and high temperatures are necessary to obtain good etch rates and to initiate the process (a resistant surface contaminant layer must be removed). A detailed XPS investigation of CoSi2 before and during the etching process is also reported.