Porous silicon light emitting diodes with distinct red and orange electroluminescent (EL) regions have been fabricated. Red luminescence is obtained by sonication of the as-formed orange-emitting porous silicon layers. While the red luminescence in the as-formed substrate is unstable in air or under irradiation, deposition of a thin layer of poly(9-vinyl cabazole) (PVK) by spin-coating effectively circumvents the oxidation process. The overall EL efficiency of the red and orange regions can be improved by depositing a thin film of a 1:1 (w/w) mixture of PVK and PBD [2-(4-biphenylyl)-5-(4-tert-butyl-phenyl)-1, 3, 4-oxadiazole] on the porous Si surface.