To investigate the effect of indium-fin-oxide (ITO) electrode on the Al-doped HfO2 (Al:HfO2) ferroelectric thin films, we fabricated and characterized the ITO/Al:HfO2/ITO and ITO/Al:HfO2/TiN capacitors by changing the annealing conditions. The ferroelectric remnant polarization (2P(r)) was obtained to be 13.25 mu C/cm(2) for the ITO/Al:HfO2/TiN capacitors with the post-deposition annealing, which was termed T1. The 2P(r) decreased after the post-metallization annealing due to the interface degradation between the Al:HfO2 and ITO electrode. Alternatively, the switching time and activation field of the T1 for the ferroelectric polarization switching were 1.25 mu s and 1.15 MV/cm. These parameters were sensitively influenced by the interfacial dead layer formation and the amounts of ferroelectric orthorhombic phase. Furthermore, the fatigue endurance of the T1 were improved by preventing the crowding of oxygen vacancies at interfaces between the Al:HfO2 and top electrodes, in which the polarization values did not experience marked variations even after the fatigue cycles of 10(8).