Copper(II) oxide powder manufacture for via-filling plating from H2O2 type etching wastes

Seung Bum Lee; Rae Yoon Jung; Sunhoe Kim

Journal of Industrial and Engineering Chemistry, Vol.79, 418-424, November, 2019

DOI10.1016/j.jiec.2019.07.016 Export Citation

Copper(II) oxide powder manufacture for via-filling plating from H2O2 type etching wastes

Seung Bum Lee, Rae Yoon Jung, and Sunhoe Kim^{1, †}

Department of Chemical Engineering, Dankook University, Yongin 16890, Republic of Korea
¹Department of New Energy & Resource Engineering, Sangji University, Wonju 26338, Republic of Korea

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Copper(II) oxide powder manufacture from H2O2 type etching waste is proposed. The basic copper carbonate, the intermediate product, is depends on the reaction mole ratio of sodium carbonate to copper hydroxide. The optimum reaction mole ratio is 2.64 at 80 C under copper content of 57.5 wt.%. The optimum usage of NaOH is 120 g for Copper(II) oxide. The Copper(II) oxide yield and chlorine ion concentration, are 97.0 wt.% and 9.0 mg L, respectively. The physical properties, such as mean particle size, dissolution time, and angle of repose are 20.0 mm, 60 s, and 34.1 , respectively. The via-hole filling thickness is 9.4 mm, which satisfies general electroplating criteria, 15 mm.

Keywords:Copper oxide;Etching waste solution;Electroplating;H2O2 type waste;Via-hole filling

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[1] Toyonage M, Jpn. Pract. Surf. Technol., 29(12), 561 (1982)

[2] Allardyce GR, Davies AJ, Wayness DJ, Singh A, US Patent 5,106,454 (1992).

[3] Pletcher D, Walsh FC, Industrial Electrochemistry, Chapman & Hall, New York, pp.468 1990.

[4] Sim YJ, Kim EY, Korean Chem. Eng. Res., 48(3), 300 (2010)

[5] Pletcher D, Walsh FC, Industrial Electrochemistry, 2nd ed., Chapman & Hall, New York, pp.468 1990.

[6] Hillus MR, US Patent 4,468,305 (1984).

[7] Moon YH, Clean Technol., 2(1), 47 (1996)

[8] Ahn JW, Yang JW, J. Korean Inst. Resour. Recycling, 6(3), 9 (1997)

[9] Lee MS, Ahn JG, Ahn JW, J. Korean Inst. Resour. Recycling, 11(6), 12 (2002)

[10] Stankovic ZD, Rajcic-Vujasinovic M, Vukovic M, Krcobic S, Wragg AA, J. Appl. Electrochem., 29(1), 81 (1999)

[11] Suzuki H, Kido O, Kurumada M, Saito Y, Kaito C, J. Crystal Growth, 275, 1539 (2005)

[12] Richardson HW, Handbook of Copper Compounds and Applications, Marcel Dekker Inc., New York, 1997.

[13] Kim YK, Riu DH, Kim SR, Kim BI, Mater. Lett., 54, 229 (2002)

[14] Lee SB, Jung RY, Kim S, J. Electrochem. Sci. Technol., 8(2), 146 (2017)

[15] Matsuki S, Akiyama K, US. Patent 0053518 (2002).