In the deposition progress of heterogeneous germanium thin film, a single crystalline silicon with suitable cut-off angle can reduce lattice mismatch between the film and substrate, and a certain substrate temperature can reduce thermal mismatch. The highly crystallized Ge thin films have been fabricated by magnetron sputtering and rapid thermal annealing (RTA) on substrates with cut-off angle, including Si (1 0 0), Si (1 0 0) misorients (1 1 0) 6 degrees and 10 degrees, Si (1 00) misorients (1 1 1) 8 degrees monocrystalline wafers. Ge film grown on Si substrate with a cut-off angle of 8 degrees at 450 degrees C has achieved the best preferred orientation of Ge (1 1 1), I (Ge (111))/I- Ge (220) average value is greater than 3 after RTA treatment at 800 degrees C for 150 s. Ge (1 1 1) has occupied a proportion of 69% in total diffraction intensity of all crystal plane. The mechanism of the Ge films crystallization on the substrate with different cut-off angels is also analyzed.