Chemical Physics Letters, Vol.730, 384-390, 2019
Intense laser field effect on D-2(+) molecular complex localized in semiconductor quantum wells
D-2(+) molecular ion in a semiconductor quantum well under laser-field radiation by using finite elements method within the effective mass approximation is theoretically studied. The effects of the laser radiation, donor-donor separation, and quantum well width on the D-2(+) total energy and the D-2(+) binding energy corresponding to the second ionization process D-2(+) -> D+ + D+ + e(-) are analyzed. We show that the laser-field radiation modifies significantly the equilibrium length and the dissociation energy of a D-2(+)-complex in a quantum well. Our results in the limit cases are in good agreement with those previously reported for a single donor impurity D-0.
Keywords:Coupled donors;H-2(+)-like impurities;Quantum well;Laser field radiation;Binding energy;Finite element method