화학공학소재연구정보센터
홈 로그인 로그아웃 연락처 사이트맵
Journal of Industrial and Engineering Chemistry, Vol.77, 230-237, September, 2019
DOI10.1016/j.jiec.2019.04.042  Export Citation
Removal of high-dose P+ ion-implanted photoresist on GaAs in the mixture of dimethyl sulfoxide and acetonitrile
Eunseok Oh, and Sangwoo Lim†
  • Department of Chemical and Biomolecular Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
E-mail:
The mixture of dimethyl sulfoxide and acetonitrile removed the P+ ion-implanted photoresist on the GaAs wafer but left photoresist residues in the GaAs trench structures. When 1 vol% of HF was added to the solution, the ion-implanted photoresist on the trench-patterned GaAs prepared with the implantation dose of 5 x 10 15 ions/cm2 at the implantation energy of 70 keV was completely removed, even at 30 °C. The enhancement of the ion-implanted photoresist removal efficiency is attributed to the increased interaction energy between the implanted photoresist and the solution that results from their similarities in the dispersive-to-polar component ratios.
Keywords:Ion implantation;Photoresist;FT-IR;Solvent;Interaction energy;Material loss
  1. Oktyabrsky S, Ye PD, Fundamentals of III-V Semiconductor MOSFETs, Springer, New York, 2010.
  2. del Alamo JA, Nature, 479(7373), 317 (2011)
  3. Kudrin AV, Dorokhin MV, Danilov YA, Malysheva EI, Tech. Phys. Lett., 37, 1168 (2011)
  4. Hung SC, Luan QP, Lin HY, Li SG, Chang SJ, Curr. Appl. Phys., 13(8), 1577 (2013)
  5. Sugaya T, Numakami O, Oshima R, Furue S, Komaki H, Amano T, Matsubara K, Okano Y, Niki S, Energy Environ. Sci., 5, 6233 (2012)
  6. Kim YJ, Lee JH, Seo KJ, Yoon CR, Roh ES, Cho JK, Hattori T, Solid State Phenom., 145 269.272 (2009).
  7. Yamamoto M, Maruoka T, Goto Y, Kono A, Horibe H, Sakamoto MA, Kusano E, Seki H, Tagawa S, J. Electrochem. Soc., 157(3), H361 (2010)
  8. Horibe H, Yamamoto M, Maruoka T, Goto Y, Kono A, Nishiyama I, Tagawa S, Thin Solid Films, 519(14), 4578 (2011)
  9. Izumi A, Matsumura H, Jpn. J. Appl. Phys., 1(41), 4639 (2002)
  10. Sioncke S, Brunco DP, Meuris M, Uwamahoro O, Van Steenbergen J, Vrancken E, Heyns MM, ECS Trans., 16, 451 (2008)
  11. Pasquariello D, Bjorlin ES, Lasaosa D, Chiu YJ, Piprek J, Bowers JE, J. Lightwave Technol., 24, 1470 (2006)
  12. Verhaverbeke S, Gouk R, Papanu J, Chen HW, Solid State Phenom., 134, 363 (2008)
  13. Gabette L, Kachtouli R, Segaud R, Besson P, ECS Trans., 58, 47 (2014)
  14. Brunco DP, De Jaeger B, Eneman G, Mitard J, Hellings G, Satta A, Terzieva V, Souriau L, Leys FE, Pourtois G, Houssa M, Winderickx G, Vrancken E, Sioncke S, Opsomer K, Nicholas G, Caymax M, Stesmans A, Van Steenbergen J, Mertens PW, Meuris M, Heyns MM, J. Electrochem. Soc., 155(7), H552 (2008)
  15. Levitin G, Myneni S, Hess DW, J. Electrochem. Soc., 151(6), G380 (2004)
  16. Ouyang CY, Lee JK, Sha J, Ober CK, Proc. SPIE, 7639, 763912 (2010)
  17. Li B, Han T, Wang L, Wang Q, Li Y, ECS J. Solid State Sci., 158, H150 (2011)
  18. Chang TFM, Ishiyama C, Sato T, Sone M, Microelectron. Eng., 110, 204 (2013)
  19. Tsvetanova D, Vos R, Vanstreels K, Radisic D, Sonnemans R, Berry I, Waldfried C, Mattson D, DeLuca J, Vereecke G, Mertens PW, Parac-Vogt TN, Heyns MM, J. Electrochem. Soc., 158(2), H150 (2011)
  20. Kesters E, Le QT, Lux M, Pittevils J, Vereecke G, Struyf H, De Gendt S, J. Electrochem. Soc., 159(5), D287 (2012)
  21. Le QT, Naumov S, Conard T, Franquet A, Muller M, Beckhoff B, Adelmann C, Struyf H, De Gendt S, Baklanov MR, ECS J. Solid State Sci., 2, N93 (2013)
  22. Claes M, Le QT, Kesters E, Lux M, Urionabarrenetxea A, Vereecke G, Mertens P, Carleer R, Adriaensens P, ECS Trans., 11, 177 (2007)
  23. Tsvetanova D, Vos R, Vereecke G, Clemente F, Vanstreels K, Conard T, Franquet A, Parac-Vogt TN, Mertens P, Heyns MM, ECS Trans., 25, 187 (2009)
  24. Wada M, Sano K, Snow J, Vos R, Leunissen LHA, Mertens PW, Eitoku A, Solid State Phenom., 145 285.288 (2009).
  25. Vereecke G, Holsteyns F, Veltens J, Lux M, Arnauts A, Kenis K, Vos R, Mertens PW, Heyns MM, VIII- Proceedings of the International Symposium 26, 145 (2003).
  26. Kim TG, Wostyn K, Mertens P, Busnaina AA, Park JG, ECS Trans., 11, 123 (2007)
  27. Yang J, Im K, Lim S, Appl. Surf. Sci., 257(13), 5476 (2011)
  28. Lee Y, Park K, Lim S, Appl. Surf. Sci., 255(5), 3318 (2008)
  29. Park K, Lee Y, Lee J, Lim S, Appl. Surf. Sci., 254(15), 4828 (2008)
  30. Oh E, Na J, Lee S, Lim S, Appl. Surf. Sci., 376, 34 (2016)
  31. Socrates G, Infrared and Raman Characteristic Group Frequencies, John Wiley & Sons, Chichester, 2001.
  32. Tsvetanova D, Vos R, Vereecke G, Parac-Vogt TN, Clemente F, Vanstreels K, Radisic D, Conard T, Franquet A, Jivanescu M, Nguyen DAP, Stesmans A, Brijs B, Mertens P, Heyns MM, J. Electrochem. Soc., 158(8), H785 (2011)
  33. Barton AFM, CRC Handbook of Solubility Parameters and Other Cohesion Parameters, CRC press, New York, 1983.
  34. Bristow GM, Watson WF, T. Faraday Soc., 54, 1731 (1958)
  35. Bristow GM, Watson WF, T. Faraday Soc., 54, 1742 (1958)
  36. Levitin G, Timmons C, Hess DW, J. Electrochem. Soc., 153(7), G712 (2006)
  37. Berg JC, Wettability, Marcel Dekker, New York, 1993.
  38. Hansen CM, Hansen solubility parameters: a user’s handbook, CRC press, London, 2000.
  39. Young T, Philos. Trans. R. Soc. Lond., 95, 65 (1805)
  40. Fowkes FM, Ind. Eng. Chem., 56, 40 (1964)
  41. Owens DK, Wendt RC, J. Appl. Polym. Sci., 13, 1741 (1969)