X-ray diffraction (XRD), scanning electron microscopy (SEM) and dielectric characterization methods were used to study the effect of Bismuth (Bi) on the phase structure, microstructure and electrical response of non-stoichiometric 0.98 PbTiO3 (PT) ceramics. Standard solid state reaction method was adopted for the preparation of compositions. Pre fired polycrystalline PT ceramics prepared with 0.98 Pb/Ti molar ratio were doped with Bismuth (< 1 mole %). Bismuth doped polycrystalline 0.98 PT ceramics were studied electrically at 1 kHz frequency in the diverse spectrum of temperature from 40 to 700 degrees C for miscellany of applications. Obtained materials were with perovskite phase, tetragonal structures (P4mm) were exhibited. Bi effectively influenced the grain development, dielectric permittivity, Curie temperature (T-C) and electrical conductivity. T-C was shifted with Bi doping from 490 to 540 degrees C with significant broad diffused peaks. Beyond To dielectric permittivity was eccentrically inclined by conductive phenomena. Semiconductor like behavior was followed with marked positive temperature coefficient of conductivity (PTC) characteristics. The bulk conductivity of BPT ceramics trailed Arrhenius law with E-a = 1.4244-0.9561eV which can be accredited to the ionic conduction absorbed by V-0(..) vacancies.