Hydride vapor phase epitaxy (HVPE) has been recognized as one of the most promising growth methods in the manufacture of low-cost III-V photovoltaics. Motivated by this application, a fully continuous moving belt HVPE reactor for the growth of multilayer heterostructures with controllable qualities at significantly greater throughput and lower per unit production cost compared to the conventional epitaxial growth tools is proposed. This paper outlines the considerations of developing such growth system, provides a computational framework to aid the process design and demonstrates the feasibility of this approach to device formation. The core of this framework is a three-dimensional transport model updated with moving mesh feature and incorporated with a semi-empirical kinetic model for HVPE growth of III-V semiconductors. Applying this model, the critical elements impacting the formation of abrupt heterointerface are developed and the key features of the designs are presented. The model is used to simulate the continuous growth of a model device and the satisfactory thickness uniformity of the final product further confirms the capability of the proposed system.