A generalized model for temperature-dependent time-resolved photocurrent of minority charge carriers in doped semiconductors is developed. The model is then applied to quantitatively interpret the time-resolved photo current data of a GaInP solar cell at different temperatures. Moreover, an analytical relationship between photocurrent and photoluminescence lifetimes is derived for the minority carriers. Under the conditions of zero external electric field, mobility and hence diffusion coefficient of minority carriers can be obtained from the measured photocurrent and photoluminescence lifetimes. This study thus may provide a deeper insight into the effective lifetimes of functional carriers in doped semiconductors and even in solar cells.