Recently bifacial n-type passivated emitter and rear totally diffused (PERT) monocrystalline silicon solar cells have become one hot spot in photovoltaic (PV) industries, due to good bifaciality, high and stabilised conversion efficiency. Unlike passivated emitter and rear contacts (PERC) structure, n-PERT solar cells require the use of a thin and uniform back surface field (BSF) layer, usually achieved by phosphorus doping. In this study, we optimised the phosphorus diffusion process in terms of surface concentration, junction depth and carrier lifetime. The effects of different phosphorus BSF were investigated by fabricating n-type front and back contact (nFAB) PERT solar cells using industrial feasible approaches and M2 size Czochralski (Cz) monocrystalline Si wafers (6 in., 244.32 cm(2)). Good phosphorus profiles were developed, which gives low parasitic absorption, low contact resistance and low J(0) value when passivated with silicon nitride (SiNx) layer. The optimised champion cell shows a high V-oc of 666.5 my, J(sc) of 40.2 mA/cm(2), fill factor of 79.9%, efficiency of 21.43% from front side-illumination, together with a good bifaciality factor of 93.0%.