The SrCuSi4O10-x wt% LiF (x = 0.5, 1.0, 1.5, 2.0) ceramics were prepared by the conventional solid-state route. The effects of LiF on the sintering behavior, microstructure, phase evolution and dielectric properties of the SrCuSi4O10 ceramics were systematically investigated. And the sintering temperature of SrCuSi4O10 ceramics has been reduced to 900 degrees C from 1100 degrees C with a certain amount of LiF. The SrCuSi4O10 ceramics with 1.0 wt% LiF addition sintered at 900 degrees C for 6 h exhibited excellent dielectric properties of epsilon(r) similar to 5.88, tan delta similar to 1.6 x 10(-3), tau(e) similar to 119.90 ppm/degrees C. However, the relatively large positive tau(e) was unfavorable to practical applications. Hence, the TiO2 that owned a considerable negative tau(e) was introduced to obtain a desired tau(e) value. The addition of 21 wt % TiO2 effectively improved the temperature stability of ceramics and tau(epsilon) was adjusted to near zero. The prepared SrCuSi4O10-1.0 wt% LiF-21 wt% TiO2 ceramics sintered at 900 degrees C for 6 h showed fairly good dielectric properties of epsilon(r) similar to 6.73, tan delta similar to 3.7 x 10(-3), tau(e) similar to 1.80 ppm/degrees C.