The amorphous Sn1- xFexO2 films deposited at room temperature by magnetron sputtering were annealed in air and Ar respectively, and the saturation magnetization of Sn1- xFexO2 films annealed in Ar is much higher than the samples annealed in air. Crystallized Sn1- xFexO2 films were obtained at the deposition temperature above 570 degrees C, which exhibited remarkable room-temperature ferromagnetism and magnetic anisotropy. The Sn1- xFexO2 films have largest saturation magnetic moment of 0.255 mu(B)/Fe at x= 0.033. In addition, Sn1- xFexO2 nanostructure arrays were produced by glancing angle sputter deposition. The Sn1- xFexO2 nanostructure arrays possess larger atomic magnetic moment, which is 0.561 mu(B)/Fe (x= 0.059), compared with the flat films.